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Gadolinum Substituted Garnets

/Gadolinum Substituted Garnets
  • Gadolinum Substituted Garnets – Microwave Ferrite

Gadolinum Substituted Garnets – Microwave Ferrite and Ceramic, Ferrites & Magnetic Materials, Garnet & Ferrite (Microwave)

Gadolinum Substituted Garnets for below resonance applications with stringent temperature requirements.

HSMAG is a China manufacturer of microwave ferrite materials in the world for the wireless industry. Our products range from high volume garnets for wireless infrastucture to specialized materials for radar applications.

Li ferrite material series:
Low magnetic loss and dielectric loss, Good stability of temperature, High dielectric coefficient

Ni ferrite material series:
Well temperature stability, Small ferromagnetic resonance line width, High spin wave width line, Low dielectric loss

Ni ferrite high power material series:
Low magnetic and dielectric loss, well temperature stability, excellent surface density and compactness

General garnet material series:
Low magnetic loss and dielectric loss, Good stability of temperature, Excellent surface density and well compatibility

Narrow line width garnet material series:
Small ferromagnetic resonance line width, Good stability of temperature, Excellent surface density and well compatibility

High power and low temperature coefficient garnet material:
Low magnetic loss and dielectric loss, Good stability in temperature, Bear the high peak power

Microwave high-Q ferrite resonator series:
Small ferromagnetic resonance width line, High working frequency band and well temperature stability (lower than 50Hz/°C), Stable properties parameter and length, No magnetic static wave oscillation in the working frequency ban0

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  • Customized is Available
  • Affordable price
  • Quality guaranteed
  • T/T or L/C accepted
  • Other payment accepted
  • Fast shipping, Worldwide delivery
  • 24-Hours excellent customer service
  • Offer free magnetic solution
  • Bulk discounts for larger orders

Product Range

Imperial
Part No. Saturation Magnetization 4πMs Landé g-Factor g-eff (Nom) Line Width δH oe @ -3dB Dielectric Constant E’ Dielectric Loss Tangent Tan=E”/E’ Curie Temperature Tc(ºC) (Nom) Spin Wave Line Width δHkoe (Nom) Remanent Induction Br(Gauss) (Nom) Coercive Force Hc (oe) (Nom) Initial Permeability μo (Nom)
G-1005 725 ± 5% 2.02 <=300 15.4 ± 5% <.0002 280 7.6 357 1.51 26
G-1003 870 ± 5% 2 <=186 15.4 ± 5% <.0002 280 6.4 543 1.10 36
G-1002 1000 ± 5% 1.99 <=132 15.4 ± 5% <.0002 280 5.8 672 0.93 48
G-1001 1200 ± 5% 1.99 <=96 15.2 ± 5% <.0002 280 4.3 717 1.00 72
G-1600 1600 ± 5% 1.98 <=66 15.1 ± 5% <.0002 280 3.8 986 0.83 116
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